BFU760F Datasheet - NXP Semiconductors

wideband silicon germanium RF transistor

BFU760F Features

* Low noise high linearity RF transistor

* High maximum output third-order intercept point 32 dBm at 1.8 GHz

* 110 GHz fT silicon germanium technology 1.3 Applications

* www.DataSheet4U.net Ka ban

BFU760F General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in t.

BFU760F Datasheet (148.42 KB)

BFU760F Datasheet Preview — Preview of BFU760F PDF

Datasheet Details

Part number:

BFU760F

Manufacturer:

NXP ↗ Semiconductors

File Size:

148.42 KB

Description:

Wideband silicon germanium rf transistor.

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BFU760F wideband silicon germanium transistor NXP Semiconductors

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BFU760F Features

BFU760F General Description

Datasheet Details

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Description:

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