BFU760F Datasheet, transistor equivalent, NXP Semiconductors

PDF File Details

Part number: BFU760F

Manufacturer: NXP (https://www.nxp.com/) Semiconductors

File Size: 148.42KB

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Description: wideband silicon germanium RF transistor

Datasheet Preview: BFU760F 📥 Download PDF (148.42KB)

BFU760F Features and benefits


* Low noise high linearity RF transistor
* High maximum output third-order intercept point 32 dBm at 1.8 GHz
* 110 GHz fT silicon germanium technology 1.3 Ap.

BFU760F Application

in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Obs.

BFU760F Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sens.

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TAGS

BFU760F
wideband
silicon
germanium
transistor
NXP Semiconductors

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