BFU760F wideband silicon germanium RF transistor

NXP Semiconductors

Description

BFU760F NPN wideband silicon germanium RF transistor Rev.1 * 29 April 2011 Product data sheet 1.Product profile 1.1 General .
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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Datasheet Specifications

Part number: BFU760F
Manufacturer: NXP ↗ Semiconductors
File Size: 148.42 KB
Datasheet: BFU760F_NXPSemiconductors.pdf
Description: wideband silicon germanium RF transistor

Features

* Low noise high linearity RF transistor
* High maximum output third-order intercept point 32 dBm at 1.8 GHz

Applications

* in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Featur

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BFU760F wideband silicon germanium transistor NXP Semiconductors

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