BFU760F - wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in t
BFU760F Features
* Low noise high linearity RF transistor
* High maximum output third-order intercept point 32 dBm at 1.8 GHz
* 110 GHz fT silicon germanium technology 1.3 Applications
* www.DataSheet4U.net Ka ban
