BFU730LX Datasheet - NXP

BFU730LX NPN wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the .

BFU730LX Features

* Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm

* Low noise high gain microwave transistor

* Noise figure (NF) = 0.75 dB at 6 GHz

* High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz

* Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:

* input thir

BFU730LX-NXP.pdf