BFU730LX Datasheet - NXP

NPN wideband silicon germanium RF transistor

BFU730LX Features

* Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm

* Low noise high gain microwave transistor

* Noise figure (NF) = 0.75 dB at 6 GHz

* High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz

* Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:

* input thir

BFU730LX General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the .

BFU730LX Datasheet (124.23 KB)

BFU730LX Datasheet Preview — Preview of BFU730LX PDF

Datasheet Details

Part number:

BFU730LX

Manufacturer:

NXP ↗

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124.23 KB

Description:

Npn wideband silicon germanium rf transistor.
627& BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 8 May 2013 Product data sheet 1. Product profile CAUTION 1.1 Gen.

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BFU730LX NPN wideband silicon germanium transistor NXP

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BFU730LX Features

BFU730LX General Description

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