BFU725F Datasheet - NXP Semiconductors

BFU725F NPN wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI.

BFU725F Features

* Low noise high gain microwave transistor

* Noise figure (NF) = 0.7 dB at 5.8 GHz

* High maximum stable gain 27 dB at 1.8 GHz

* 110 GHz fT silicon germanium technology 1.3 Applications

* 2nd LNA stage and mixer stage in DBS LNB’s

* Satellite radio

* Low noise amplifiers

BFU725F_NXPSemiconductors.pdf

BFU725F Datasheet Preview — Preview of BFU725F PDF

Datasheet Details

Part number:

BFU725F

Manufacturer:

NXP ↗ Semiconductors

File Size:

136.91 KB

Description:

Npn wideband silicon germanium rf transistor.

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BFU725F BFU725F NPN wideband silicon germanium transistor NXP Semiconductors

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