BFU725F Datasheet - NXP Semiconductors

NPN wideband silicon germanium RF transistor

BFU725F Features

* Low noise high gain microwave transistor

* Noise figure (NF) = 0.7 dB at 5.8 GHz

* High maximum stable gain 27 dB at 1.8 GHz

* 110 GHz fT silicon germanium technology 1.3 Applications

* 2nd LNA stage and mixer stage in DBS LNB’s

* Satellite radio

* Low noise amplifiers

BFU725F General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI.

BFU725F Datasheet (136.91 KB)

BFU725F Datasheet Preview — Preview of BFU725F PDF

Datasheet Details

Part number:

BFU725F

Manufacturer:

NXP ↗ Semiconductors

File Size:

136.91 KB

Description:

Npn wideband silicon germanium rf transistor.
BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 3 November 2011 Product data sheet 1. Product profile CAUTION 1.1 Gener.

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BFU725F NPN wideband silicon germanium transistor NXP Semiconductors

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BFU725F Features

BFU725F General Description

Datasheet Details

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