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BFU725F-N1 NPN wideband silicon germanium RF transistor

NXP

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Description

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev.2 * 3 November 2011 Product data sheet 1.Product profile CAUTION 1.1 Gener.
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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Datasheet Specifications

Part number: BFU725F-N1
Manufacturer: NXP ↗
File Size: 101.08 KB
Datasheet: BFU725F-N1-NXP.pdf
Description: NPN wideband silicon germanium RF transistor

Features

* Low noise high gain microwave transistor
* Noise figure (NF) = 0.7 dB at 5.8 GHz
* High maximum stable gain 27 dB at 1.8 GHz

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BFU725F-N1 NPN wideband silicon germanium transistor NXP

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