BFU725F-N1 Datasheet, transistor equivalent, NXP

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Part number: BFU725F-N1

Manufacturer: NXP (https://www.nxp.com/)

File Size: 101.08KB

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Description: NPN wideband silicon germanium RF transistor

Datasheet Preview: BFU725F-N1 📥 Download PDF (101.08KB)

BFU725F-N1 Features and benefits


* Low noise high gain microwave transistor
* Noise figure (NF) = 0.7 dB at 5.8 GHz
* High maximum stable gain 27 dB at 1.8 GHz
* 110 GHz fT silicon german.

BFU725F-N1 Application

in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe pr.

BFU725F-N1 Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive d.

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TAGS

BFU725F-N1
NPN
wideband
silicon
germanium
transistor
NXP

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