BFU725F-N1 - NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI
BFU725F-N1 Features
* Low noise high gain microwave transistor
* Noise figure (NF) = 0.7 dB at 5.8 GHz
* High maximum stable gain 27 dB at 1.8 GHz
* 110 GHz fT silicon germanium technology 1.3 Applications
* 2nd LNA stage and mixer stage in DBS LNB’s
* Satellite radio
* Low noise amplifiers
