BFU725F-N1 Datasheet - NXP

BFU725F-N1 NPN wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI.

BFU725F-N1 Features

* Low noise high gain microwave transistor

* Noise figure (NF) = 0.7 dB at 5.8 GHz

* High maximum stable gain 27 dB at 1.8 GHz

* 110 GHz fT silicon germanium technology 1.3 Applications

* 2nd LNA stage and mixer stage in DBS LNB’s

* Satellite radio

* Low noise amplifiers

BFU725F-N1 Datasheet (101.08 KB)