BFU610F Datasheet (NXP) - NPN Wideband Silicon Germanium RF Transistor

BFU610F, NPN Wideband Silicon Germanium RF Transistor

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20

BFU610F Features

* Low noise high gain microwave transistor

* Noise figure (NF) = 1.7 dB at 5.8 GHz

* High associated gain 13.5 dB at 5.8 GHz

* 40 GHz fT silicon technology 1.3 Applications

* Low current battery equipped applications

* Low noise amplifiers for microwav