BFU610F NPN Wideband Silicon Germanium RF Transistor

NXP

Description

BFU610F NPN wideband silicon RF transistor Rev.2 * 11 January 2011 Product data sheet 1.Product profile CAUTION 1.1 General .
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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Datasheet Specifications

Part number: BFU610F
Manufacturer: NXP ↗
File Size: 126.30 KB
Datasheet: BFU610F_PhilipsSemiconductors.pdf
Description: NPN Wideband Silicon Germanium RF Transistor

Features

* Low noise high gain microwave transistor
* Noise figure (NF) = 1.7 dB at 5.8 GHz
* High associated gain 13.5 dB at 5.8 GHz

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BFU610F NPN Wideband Silicon Germanium Transistor NXP

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