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BFU610F Datasheet - NXP

BFU610F_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BFU610F

Manufacturer:

NXP ↗

File Size:

126.30 KB

Description:

Npn wideband silicon germanium rf transistor.

BFU610F, NPN Wideband Silicon Germanium RF Transistor

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20

BFU610F Features

* Low noise high gain microwave transistor

* Noise figure (NF) = 1.7 dB at 5.8 GHz

* High associated gain 13.5 dB at 5.8 GHz

* 40 GHz fT silicon technology 1.3 Applications

* Low current battery equipped applications

* Low noise amplifiers for microwav

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