Part number:
BFU610F
Manufacturer:
File Size:
126.30 KB
Description:
Npn wideband silicon germanium rf transistor.
BFU610F_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
BFU610F
Manufacturer:
File Size:
126.30 KB
Description:
Npn wideband silicon germanium rf transistor.
BFU610F, NPN Wideband Silicon Germanium RF Transistor
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20
BFU610F Features
* Low noise high gain microwave transistor
* Noise figure (NF) = 1.7 dB at 5.8 GHz
* High associated gain 13.5 dB at 5.8 GHz
* 40 GHz fT silicon technology 1.3 Applications
* Low current battery equipped applications
* Low noise amplifiers for microwav
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