BGF1801-10 - GSM1800 EDGE power-module

NXP

📥 Download Datasheet

BGF1801-10 Datasheet Preview — Preview of BGF1801-10 PDF

Datasheet Details

Part number	BGF1801-10
Manufacturer	NXP
File Size	123.88 KB
Description	GSM1800 EDGE power-module
Datasheet	BGF1801-10_PhilipsSemiconductors.pdf

BGF1801-10 Product details

Description

10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band. DESCRIPTION f (MHz) 1805 to 1880 1805 to 1880 VS (V) 26 26 PL (W) 10 3.5 Gp (dB) 25.5 26.5 η (%) 34 19 Top view 1 BGF1801-10 PINNING - SOT365C PIN 1 2 3 Flange RF input

Features

Typical GSM EDGE performance at a supply voltage of 26 V:.
Output power = 3.5 W.
Gain = 26.5 dB.
Efficiency = 19%.
ACPR <.
63 dBc at 400 kHz.
rms EVM < 1.2%.
peak EVM < 3.6%.
Low distortion to CDMA signals.
Excellent 2-tone performance.
Low die temperature due to copper flange.
Integrated temperature compensated bias.
50 Ω input/output impedance.
Flat gain over frequency.

📁 BGF1801-10 Similar Datasheet

BGF104 - HSMMC Interface Filter and ESD Protection (Infineon)
BGF104C - HSMMC Interface Filter and ESD Protection (Infineon)
BGF106 - SIM Card Interface Filter and ESD Protection (Infineon)
BGF106C - SIM Card Interface Filter and ESD Protection (Infineon)
BGF108 - 7 Channel LCD Filter Array (Infineon)
BGF108C - 7 Channel LCD Filter Array (Infineon)
BGF108L - 7 Channel LCD Filter Array (Infineon)
BGF109 - 10 Channel LCD Filter Array (Infineon)

Other Datasheets by NXP

BGF1901-10 - GSM1900 EDGE power module
BGF844 - GSM800 EDGE power module
BGF944 - GSM900 EDGE power module

Published: Jan 19, 2007 |