BGF1801-10 GSM1800 EDGE power-module

NXP

Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product speciﬁcation 2003 Dec 15 Philips Semic.
10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band.

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Datasheet Specifications

Part number: BGF1801-10
Manufacturer: NXP ↗
File Size: 123.88 KB
Datasheet: BGF1801-10_PhilipsSemiconductors.pdf
Description: GSM1800 EDGE power-module

Features

* Typical GSM EDGE performance at a supply voltage of 26 V:
* Output power = 3.5 W
* Gain = 26.5 dB
* Efficiency = 19%
* ACPR <
* 63 dBc at 400 kHz
* rms EVM < 1.2%
* peak EVM < 3.6%.
* Low distortion to CDMA signals
* Ex

Applications

* Base station RF power amplifiers in the 1805 to 1880 MHz frequency range
* GSM, GSM EDGE, multi carrier applications

BGF1801-10 Distributors

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