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BGF1801-10 GSM1800 EDGE power-module

BGF1801-10 Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product speciļ¬cation 2003 Dec 15 Philips Semic.
10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band.

BGF1801-10 Features

* Typical GSM EDGE performance at a supply voltage of 26 V:
* Output power = 3.5 W
* Gain = 26.5 dB
* Efficiency = 19%
* ACPR <
* 63 dBc at 400 kHz
* rms EVM < 1.2%
* peak EVM < 3.6%.
* Low distortion to CDMA signals
* Ex

BGF1801-10 Applications

* Base station RF power amplifiers in the 1805 to 1880 MHz frequency range
* GSM, GSM EDGE, multi carrier applications

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GSM1800 EDGE power-module NXP
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