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BGF1901-10 Datasheet - NXP

BGF1901-10_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BGF1901-10

Manufacturer:

NXP ↗

File Size:

123.87 KB

Description:

Gsm1900 edge power module.

BGF1901-10, GSM1900 EDGE power module

10 W LDMOS power amplifier module for base station amplifier applications in the 1930 to 1990 MHz band.

QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C; ZS = ZL = 50 Ω.

MODE OF OPERATION CW GSM EDGE Note 1.

ACPR 400 kHz at 30 kHz resolution bandwidth.

f (MHz) 1930 to 1990 1930 to 1990 VS

BGF1901-10 Features

* Typical GSM EDGE performance at a supply voltage of 26 V:

* Output power = 3.5 W

* Gain = 26.5 dB

* Efficiency = 19 %

* ACPR <

* 63 dBc at 400 kHz

* rms EVM < 1.2 %

* peak EVM < 3.6 %.

* Low distortion to a CDMA signal

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