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BGF1901-10 GSM1900 EDGE power module

BGF1901-10 Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product speciļ¬cation Supersedes data of 2003 No.
10 W LDMOS power amplifier module for base station amplifier applications in the 1930 to 1990 MHz band.

BGF1901-10 Features

* Typical GSM EDGE performance at a supply voltage of 26 V:
* Output power = 3.5 W
* Gain = 26.5 dB
* Efficiency = 19 %
* ACPR <
* 63 dBc at 400 kHz
* rms EVM < 1.2 %
* peak EVM < 3.6 %.
* Low distortion to a CDMA signal

BGF1901-10 Applications

* Base station RF power amplifiers in the 1930 to 1990 MHz frequency range
* GSM, GSM EDGE, multi carrier applications

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GSM1900 EDGE power module NXP
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