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BGF844 GSM800 EDGE power module

BGF844 Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product speciļ¬cation Supersedes data of 2003 Feb 26 2003 Jun 06 Philips .
23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band.

BGF844 Features

* Typical GSM EDGE performance at a supply voltage of 26 V:
* Output power = 2.5 W
* Gain = 30 dB
* Efficiency = 16%
* ACPR <
* 65 dBc at 400 kHz
* rms EVM < 0.4%
* peak EVM < 1.2%
* Low distortion to a GSM EDGE signal

BGF844 Applications

* Base station RF power amplifiers in the 869 to 894 MHz frequency range
* GSM, GSM EDGE, multi carrier applications

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