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BGF944 - GSM900 EDGE power module

NXP

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Datasheet Details

Part number	BGF944
Manufacturer	NXP
File Size	91.74 KB
Description	GSM900 EDGE power module
Datasheet	BGF944_PhilipsSemiconductors.pdf

BGF944 Product details

Description

17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band. 65(1) Fig.1 Simplified outline.

Features

Typical GSM EDGE performance at a supply voltage of 26 V:.
Output power = 2.5 W.
Gain = 29 dB.
Efficiency = 15%.
ACPR <.
65 dBc at 400 kHz.
rms EVM < 0.4%.
peak EVM < 1.2%.
Low distortion to a GSM EDGE signal.
Excellent 2-tone performance.
Low die temperature due to copper flange.
Integrated temperature compensated bias.
50 Ω input/output impedance.
Flat gain over frequen.

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Published: Mar 23, 2005 |