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BGF944 GSM900 EDGE power module

BGF944 Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product speciļ¬cation Supersedes data of 2003 Feb 26 2003 Jun 06 Philips .
17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band.

BGF944 Features

* Typical GSM EDGE performance at a supply voltage of 26 V:
* Output power = 2.5 W
* Gain = 29 dB
* Efficiency = 15%
* ACPR <
* 65 dBc at 400 kHz
* rms EVM < 0.4%
* peak EVM < 1.2%
* Low distortion to a GSM EDGE signal

BGF944 Applications

* Base station RF power amplifiers in the 920 to 960 MHz frequency band
* GSM, GSM EDGE, multi carrier applications

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