BGF944 Datasheet - NXP

BGF944 GSM900 EDGE power module

17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. f (MHz) 920 to 960 920 to 960 VS (V) 26 26 PL (W) 17 2..

BGF944 Features

* Typical GSM EDGE performance at a supply voltage of 26 V:

* Output power = 2.5 W

* Gain = 29 dB

* Efficiency = 15%

* ACPR <

* 65 dBc at 400 kHz

* rms EVM < 0.4%

* peak EVM < 1.2%

* Low distortion to a GSM EDGE signal

BGF944_PhilipsSemiconductors.pdf