BLF578XR Datasheet - NXP

Power LDMOS transistor

BLF578XR Features

* Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:

* Output power = 1400 W

* Power gain = 23.5 dB

* Efficiency = 69 %

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

BLF578XR General Description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performa.

BLF578XR Datasheet (176.05 KB)