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BLF578XR Power LDMOS transistor

BLF578XR Description

BLF578XR; BLF578XRS Power LDMOS transistor Rev.4 * 12 July 2013 Product data sheet 1.Product profile 1.1 General .
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

BLF578XR Features

* Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:
* Output power = 1400 W
* Power gain = 23.5 dB
* Efficiency = 69 %
* Easy power control
* Integrated ESD protection
* Excellent ruggedness

BLF578XR Applications

* in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal pulsed RF f (MHz) 225 VDS PL (V) (W)

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Datasheet Details

Part number
BLF578XR
Manufacturer
NXP ↗
File Size
176.05 KB
Datasheet
BLF578XR-NXP.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor NXP
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