BSH207

P-channel enhancement mode MOS transistor

NXP

BSH207 Features

* Very low threshold voltage

* Fast switching

* Logic level compatible

* Subminiature surface mount package BSH207 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -1.52 A RDS(ON) ≤ 0.15 Ω (VGS = -2.5 V) VGS(TO) ≥ 0.4 V d g GENERAL DESCRIPTION P-channel, enhancemen

BSH207 General Description

P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH207 is supplied in the SOT457 subminiature surface mounting package..

BSH207 Datasheet (155.48 KB)

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