BSH205G2 - P-channel Trench MOSFET

nexperia

BSH205G2 Datasheet Preview — Preview of BSH205G2 PDF

Datasheet Details

Part number	BSH205G2
Manufacturer	nexperia ↗
File Size	730.07 KB
Description	P-channel Trench MOSFET
Datasheet	BSH205G2-nexperia.pdf

BSH205G2 Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Low threshold voltage.
Low on-state resistance.
Trench MOSFET technology.
Enhanced power dissipation capability of 890 mW.
AEC-Q101 qualified 3.

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Published: Sep 11, 2017 |