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BSH205G2 P-channel Trench MOSFET

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Description

BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Features

* Low threshold voltage
* Low on-state resistance
* Trench MOSFET technology
* Enhanced power dissipation capability of 890 mW

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

BSH205G2 Distributors

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