BSH299 Datasheet - NXP

BSH299 P-channel enhancement mode MOS transistor

drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. 1 2 3 MAM396 g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. .

BSH299 Features

* Low threshold voltage

* High-speed switching

* No secondary breakdown

* Direct interface to C-MOS, TTL, etc. APPLICATIONS

* Power management

* Battery powered applications e.g. cellular phones

* General purpose switch. handbook, halfpage BSH

BSH299 Datasheet (93.64 KB)