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BSH299 P-channel enhancement mode MOS transistor

NXP

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective speciﬁcation File under Discrete Semiconductors, SC13b.
drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package.

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Datasheet Specifications

Part number: BSH299
Manufacturer: NXP ↗
File Size: 93.64 KB
Datasheet: BSH299_PhilipsSemiconductors.pdf
Description: P-channel enhancement mode MOS transistor

Features

* Low threshold voltage
* High-speed switching
* No secondary breakdown

Applications

* Power management
* Battery powered applications e. g. cellular phones

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BSH299 P-channel enhancement mode MOS transistor NXP

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