BSH299 - P-channel enhancement mode MOS transistor

NXP

The BSH299 by NXP is a P-channel enhancement mode MOS transistor. Below is the official datasheet preview.

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BSH299 P-channel enhancement mode MOS transistor by NXP - Datasheet Preview — Official preview page of the **BSH299** P-channel enhancement mode MOS transistor datasheet (NXP).

Datasheet Details

Part number	BSH299
Manufacturer	NXP
File Size	93.64 KB
Description	P-channel enhancement mode MOS transistor
Datasheet	BSH299_PhilipsSemiconductors.pdf
Additional preview pages of the BSH299 datasheet.

BSH299 Product details

Description

drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package.1 2 3 MAM396 g s CAUTION The device is supplied in an antistatic package.The gate-source input must be protected against static discharge during transport or handling.QUICK REFERENCE DATA SYMBOL VDS VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance

Features

Low threshold voltage.
High-speed switching.
No secondary breakdown.
Direct interface to C-MOS, TTL, etc.

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Published: Mar 23, 2005 |