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BSH205G2A P-channel Trench MOSFET

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Description

BSH205G2A 20 V, P-channel Trench MOSFET 13 October 2020 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Features

* Low threshold voltage
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* Very fast switching

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -8 -

BSH205G2A Distributors

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