BSP090 - P-channel enhancement mode vertical D-MOS transistor

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NXP

BSP090 P-channel enhancement mode vertical D-MOS transistor by NXP - Datasheet Preview — Datasheet preview – BSP090

Datasheet Details

Part number	BSP090
Manufacturer	NXP
File Size	124.07 KB
Description	P-channel enhancement mode vertical D-MOS transistor
Datasheet	BSP090 Datasheet
Additional preview pages of the BSP090 datasheet.

Product details

Description

4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package.g CAUTION The device is supplied in an antistatic package.The gate-source input must be protected against static discharge during transport or handling.s 1 Top view 2 3 MAM121 Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source thr

Features

High speed switching.
No secondary breakdown.
Very low on-state resistance.

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Published: Mar 23, 2005 |