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BSP090 - P-channel enhancement mode vertical D-MOS transistor

Datasheet Summary

Description

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • High speed switching.
  • No secondary breakdown.
  • Very low on-state resistance.

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Datasheet Details

Part number BSP090
Manufacturer NXP
File Size 124.07 KB
Description P-channel enhancement mode vertical D-MOS transistor
Datasheet download datasheet BSP090 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET BSP090 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 1997 Mar 13 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • High speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator drivers • Power management • Synchronized rectification. handbook, halfpage BSP090 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d gate drain source drain DESCRIPTION 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. g CAUTION The device is supplied in an antistatic package.
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