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BSP100 N-channel enhancement mode TrenchMOS transistor

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Description

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS™ transistor .
N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Motor and relay drivers.

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Features

* ’Trench’ technology
* Low on-state resistance
* Fast switching
* High thermal cycling performance
* Low thermal resistance BSP100 SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 6 A g RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s GENERAL

Applications

* Motor and relay drivers
* d. c. to d. c. converters

BSP100 Distributors

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N-channel enhancement mode TrenchMOS transistor NXP
NXP BSP100-like datasheet