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BSP121 N-channel enhancement mode vertical D-MOS transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 Fi.
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone se.

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Features

* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP121 Transfer admittance ID = 400 mA; VDS = 25 V  Yfs  min. typ. QUICK REFERENCE DATA Drain source voltage Gate-sou

Applications

* BSP121 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. These products are not designed for use in life support appliances, devi

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BSP121 N-channel enhancement mode vertical D-MOS transistor NXP
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