* Direct interface to C-MOS, TTL, etc.
* High-speed switching.
* No secondary breakdown. PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP126 QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-
BSP126
75.34 KB
N-channel enhancement mode vertical d-mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto.
📁 Related Datasheet
BSP120 N-channel enhancement mode vertical D-MOS transistor (NXP)
BSP121 N-channel enhancement mode vertical D-MOS transistor (NXP)
BSP122 N-channel enhancement mode vertical D-MOS transistor (NXP)
BSP122 N-Channel MOSFET (VBsemi)
BSP123 N-Channel MOSFET (VBsemi)
BSP123 Small-Signal Transistor (Siemens Semiconductor Group)
BSP123 SIPMOS Small-Signal-Transistor (Infineon Technologies AG)
BSP125 SIPMOS Small-Signal Transistor (Siemens Semiconductor Group)
BSP125 SIPMOS Power-Transistor (Infineon Technologies AG)
BSP127 N-channel enhancement mode vertical D-MOS transistor (NXP)
