BSP126 N-channel enhancement mode vertical D-MOS transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconducto.
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and f.

📥 Download Datasheet

BSP126 Datasheet Preview — Preview of BSP126 PDF

Datasheet Specifications

Part number: BSP126
Manufacturer: NXP ↗
File Size: 75.34 KB
Datasheet: BSP126_PhilipsSemiconductors.pdf
Description: N-channel enhancement mode vertical D-MOS transistor

Features

* Direct interface to C-MOS, TTL, etc.
* High-speed switching.
* No secondary breakdown. PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP126 QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-

Applications

* BSP126 This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. These products are not designed for use in life support appliances, devi

BSP126 Distributors

📁 Related Datasheet

BSP123 BSP125 BSP129 BSP135 BSP149 BSP15

📌 All Tags

BSP126 N-channel enhancement mode vertical D-MOS transistor NXP

NXP BSP126-like datasheet