BSP108 N-channel enhancement mode vertical D-MOS transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BSP108 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconducto.
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer dri.

📥 Download Datasheet

BSP108 Datasheet Preview — Preview of BSP108 PDF

Datasheet Specifications

Part number: BSP108
Manufacturer: NXP ↗
File Size: 64.71 KB
Datasheet: BSP108_PhilipsSemiconductors.pdf
Description: N-channel enhancement mode vertical D-MOS transistor

Features

* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No secondary breakdown PINNING - SOT223 1 2 3 4 = gate = drain = source = drain ID = 500 mA; VGS = 10 V Transfer admittance ID = 500 mA; VDS = 15 V  Yfs  RDS(on) QUICK REFERENCE DATA Drain-source voltage Gate-s

Applications

* BSP108 This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. These products are not designed for use in life support appliances, devi

BSP108 Distributors

📁 Related Datasheet

BSP122 BSP123 BSP125 BSP129 BSP135 BSP149

📌 All Tags

BSP108 N-channel enhancement mode vertical D-MOS transistor NXP

NXP BSP108-like datasheet