BSP100 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS™ transistor Features - ’Trench’ technology - Low on-state resistance - Fast switching - High thermal cycling performance - Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 6 A g RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- Motor and relay drivers - d.c. to d.c. converters - Logic level translator The BSP100 is supplied in the SOT223 surface mounting package. PINNING PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION SOT22...