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BSP107 - N-channel enhancement mode vertical D-MOS transistor

General Description

N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope.

Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching.

Key Features

  • Direct interface to C-MOS, TTL, etc. due to low threshold voltage.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSP107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. due to low threshold voltage • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline and symbol.