BSP108 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BSP108 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. Features - Direct interface to C-MOS, TTL, etc. - High-speed switching - No secondary breakdown PINNING - SOT223 1 2 3 4 = gate = drain = source = drain ID = 500 mA; VGS = 10 V Transfer admittance ID = 500 mA; VDS = 15 V  Yfs  RDS(on) QUICK REFERENCE DATA...