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BSP100 - N-channel enhancement mode TrenchMOS transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Motor and relay drivers

d.c.

to d.c.

Logic level translator The BSP100 is supplied in the SOT223 surface mounting package.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • High thermal cycling performance.
  • Low thermal resistance BSP100 SYMBOL d QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS™ transistor FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance BSP100 SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 6 A g RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters • Logic level translator The BSP100 is supplied in the SOT223 surface mounting package.