BSP106 Description
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. 60 425 4 3 UNIT V mA Ω V handbook, halfpage 4 d DESCRIPTION g s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the System (IEC...
BSP106 Key Features
- Very low RDS(on)
- Direct interface to C-MOS, TTL, etc
- High-speed switching
- No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope
- SOT223 PIN 1 2 3 4 gate drain source drain
- DC value ID = 200 mA VGS = 10 V ID = 1 mA VGS = VDS MAX. 60 425 4 3 UNIT V mA Ω V