Datasheet Details
| Part number | BSP106 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 65.75 KB |
| Description | N-channel enhancement mode vertical D-MOS transistor |
| Datasheet | BSP106_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET BSP106 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification.
| Part number | BSP106 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 65.75 KB |
| Description | N-channel enhancement mode vertical D-MOS transistor |
| Datasheet | BSP106_PhilipsSemiconductors.pdf |
|
|
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N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers.
PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM054 BSP106 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage CONDITIONS − DC value ID = 200 mA VGS = 10 V ID = 1 mA VGS = VDS MAX.
60 425 4 3 UNIT V mA Ω V PIN CONFIGURATION handbook, halfpage 4 d DESCRIPTION g s Fig.1 Simplified outline and symbol.
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