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BSP110 - N-channel enhancement mode vertical D-MOS transistor

Datasheet Summary

Description

N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers.

Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Datasheet Details

Part number BSP110
Manufacturer NXP
File Size 75.69 KB
Description N-channel enhancement mode vertical D-MOS transistor
Datasheet download datasheet BSP110 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BSP110 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc.
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