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BSP110 N-channel enhancement mode vertical D-MOS transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BSP110 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto.
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for applicat.

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Features

* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain MARKING CODE BSP110 PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Drain source voltage (non-repetitive peak; tp ≤ 2 ms

Applications

* These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to ful

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