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BUK110-50GS - Power MOSFET

BUK110-50GS Description

Philips Semiconductors Product specification PowerMOS transistor TOPFET .
Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automot.

BUK110-50GS Features

* Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overloa

BUK110-50GS Applications

* BUK110-50GS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. 50 50 125 150 28 UNIT V A W ˚C mΩ APPLICATIONS General controll

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Power MOSFET NXP
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