BUK110-50GS Power MOSFET

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor TOPFET .
Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automot.

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Datasheet Specifications

Part number: BUK110-50GS
Manufacturer: NXP ↗
File Size: 113.37 KB
Datasheet: BUK110-50GS_PhilipsSemiconductors.pdf
Description: Power MOSFET

Features

* Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overloa

Applications

* BUK110-50GS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. 50 50 125 150 28 UNIT V A W ˚C mΩ APPLICATIONS General controll

BUK110-50GS Distributors

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BUK110-50GS Power MOSFET NXP

NXP BUK110-50GS-like datasheet