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BUK113-50DL - Power MOSFET

BUK113-50DL Description

Philips Semiconductors Objective specification PowerMOS transistor Logic level TOPFET .
Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive system.

BUK113-50DL Features

* Vertical power DMOS output stage Overload protected up to 125˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from inpu

BUK113-50DL Applications

* BUK113-50DL QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Drain current limiting Total power dissipation Continuous junction temperature Drain-source on-state resistance MIN. 4 MAX. UNIT 50 8 4 150 200 V A W ˚C mΩ APPLICATIONS General controller for d

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Power MOSFET NXP
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