BUK436W-200B PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

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Datasheet Specifications

Part number: BUK436W-200B
Manufacturer: NXP ↗
File Size: 71.28 KB
Datasheet: BUK436W-200B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK436 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -200A 200 19 125 0.16 MAX. -200B 200 17 125 0.2 UNIT V A W Ω PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCRI

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📁 Related Datasheet

BUK436-100A BUK436-100B BUK436-200A BUK436-200B BUK436-60A BUK436-60B

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BUK436W-200B PowerMOS transistor NXP

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