BUK436W-200B Datasheet - NXP

BUK436W-200B, PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

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BUK436W-200B_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUK436W-200B

Manufacturer:

NXP ↗

File Size:

71.28 KB

Description:

PowerMOS transistor

Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK436 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -200A 200 19 125 0.16 MAX. -200B 200 17 125 0.2 UNIT V A W Ω PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCRI

BUK436W-200B Distributors

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BUK436W-200B PowerMOS transistor NXP

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