BUK436W-800A
69.76kb
Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power
TAGS
📁 Related Datasheet
BUK436W-800B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power .
BUK436W-1000B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-1000B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK436W-200A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK436W-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power .
BUK436W-200B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK436W-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power .
BUK436-100A - PowerMOS transistor
(Philips)
.
BUK436-100A - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
BUK436-100A/B
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switchin.
BUK436-100B - PowerMOS transistor
(Philips)
.
BUK436-100B - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
BUK436-100A/B
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switchin.
BUK436-200A - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
BUK436-200A/B
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switchin.
BUK436-200B - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
BUK436-200A/B
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switchin.