BUK446-1000B
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Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched
📁 Related Datasheet
BUK446-800A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK446-800A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust d.
BUK446-800B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK446-800B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust d.
BUK444-200A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK444-200A - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust d.
BUK444-200B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK444-200B - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust d.
BUK444-220A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUK444-200A
DESCRIPTION ·5.3A, 200V • SOA is Power Dissipation Limi.
BUK444-500B - Power MOS Transistor
(Philips)
.
