BUK456-800B Datasheet, Transistor, NXP

PDF File Details

Part number:

BUK456-800B

Manufacturer:

NXP ↗

File Size:

62.14kb

Download:

📄 Datasheet

Description:

Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power

BUK456-800B Application

• Applications QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Drai

TAGS

BUK456-800B

NXP

📁 Related Datasheet

BUK456-800A - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-800A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.

BUK456-800B - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.

BUK456-1000B - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK456-1000B GENERAL DESCRIPTION N-channel enhancement mode field-effect power tr.

BUK456-100A - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-100A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.

BUK456-100B - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-100B - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.

BUK456-200A - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-200A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.