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BUK465-60H PowerMOS transistor

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Description

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

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Applications

* The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 60 43 125 175 34 UNIT V A

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