BUK474-200B PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

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Datasheet Specifications

Part number: BUK474-200B
Manufacturer: NXP ↗
File Size: 80.14 KB
Datasheet: BUK474-200B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK474-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK474 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -200A 200 5.3 25 0.4 MAX. -200B 200 4.7 25 0.5 UNIT V A W Ω PINNING - SOT186A PIN 1 2 3 gate drain source DESCRIPTI

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📁 Related Datasheet

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BUK474-200B PowerMOS transistor NXP

NXP BUK474-200B-like datasheet