BUK563-48C Datasheet - NXP

BUK563-48C, PowerMOS transistor Voltage clamped logic level FET

Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL .
Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

Applications

* The device is intended for use in automotive applications. It has built-in zener diodes providing active drain voltage clamping. BUK563-48C QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot Tj WDSRR RDS(ON) PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Junction temper

BUK563-48C_PhilipsSemiconductors.pdf