BUK563-60A PowerMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

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Datasheet Specifications

Part number: BUK563-60A
Manufacturer: NXP ↗
File Size: 53.50 KB
Datasheet: BUK563-60A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor Logic level FET

Applications

* The device is intended for use in automotive and general purpose switching applications. BUK563-60A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 60

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BUK563-60A PowerMOS transistor Logic level FET NXP

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