BUK565-60H Datasheet - NXP

BUK565-60H, PowerMOS transistor Logic level FET

Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

Applications

* The device is intended for use in automotive and general purpose switching applications. BUK565-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 60

BUK565-60H_PhilipsSemiconductors.pdf