BUK9518-30 Datasheet, Fet, NXP

BUK9518-30 Features

• Fet very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK9518-30

PDF File Details

Part number:

BUK9518-30

Manufacturer:

NXP ↗

File Size:

47.50kb

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📄 Datasheet

Description:

Trenchmos transistor logic level fet. N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device feat

BUK9518-30 Application

• Applications BUK9518-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipat

TAGS

BUK9518-30

NXP

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