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BUK95180-100A Logic level FET

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Description

Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

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Applications

* BUK95180-100A BUK96180-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 100 11 54 175 180 173 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT4

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