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BUK9830-30 TrenchMOS transistor Logic level FET

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Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

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Applications

* BUK9830-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 30 12.8 5.9 8.3 150 30 UNIT V A A W ˚C mΩ PINNI

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TrenchMOS transistor Logic level FET NXP
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