Datasheet4U Logo Datasheet4U.com

CLF1G0035S-100, CLF1G0035-100 Datasheet - NXP

CLF1G0035S-100 Broadband RF power GaN HEMT

CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a c.

CLF1G0035S-100 Features

* Frequency of operation is from DC to 3.5 GHz

* 100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT

* Excellent ruggedness (VSWR 10 : 1)

* High voltage operation (50 V)

* Thermally enhanced package 1.

CLF1G0035-100-NXP.pdf

This datasheet PDF includes multiple part numbers: CLF1G0035S-100, CLF1G0035-100. Please refer to the document for exact specifications by model.
CLF1G0035S-100 Datasheet Preview Page 2 CLF1G0035S-100 Datasheet Preview Page 3

Datasheet Details

Part number:

CLF1G0035S-100, CLF1G0035-100

Manufacturer:

NXP ↗

File Size:

184.41 KB

Description:

Broadband rf power gan hemt.

Note:

This datasheet PDF includes multiple part numbers: CLF1G0035S-100, CLF1G0035-100.
Please refer to the document for exact specifications by model.

CLF1G0035S-100 Distributor

📁 Related Datasheet

CLF1G0035S-100 Broadband RF power GaN HEMT (Ampleon)

CLF1G0035S-100P Broadband RF power GaN HEMT (Ampleon)

CLF1G0035S-200P Broadband RF power GaN HEMT (Ampleon)

CLF1G0035S-50 Broadband RF power GaN HEMT (Ampleon)

CLF1G0035-100 Broadband RF power GaN HEMT (Ampleon)

CLF1G0035-100 Broadband RF power GaN HEMT (NXP)

CLF1G0035-100P Broadband RF power GaN HEMT (Ampleon)

CLF1G0035-200P Broadband RF power GaN HEMT (Ampleon)

TAGS

CLF1G0035S-100 CLF1G0035-100 Broadband power GaN HEMT NXP