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CLF1G0035S-100, CLF1G0035-100 Broadband RF power GaN HEMT

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Description

CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev.2 * 29 January 2013 Objective data sheet 1.Product profile 1.1 General descri.
CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.

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This datasheet PDF includes multiple part numbers: CLF1G0035S-100, CLF1G0035-100. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
CLF1G0035S-100, CLF1G0035-100
Manufacturer
NXP ↗
File Size
184.41 KB
Datasheet
CLF1G0035-100-NXP.pdf
Description
Broadband RF power GaN HEMT
Note
This datasheet PDF includes multiple part numbers: CLF1G0035S-100, CLF1G0035-100.
Please refer to the document for exact specifications by model.

Features

* Frequency of operation is from DC to 3.5 GHz
* 100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT
* Excellent ruggedness (VSWR 10 : 1)
* High voltage operation (50 V)
* Thermally enhanced package 1.

Applications

* Commercial wireless infrastructure (cellular, WiMAX)
* Radar
* Broadband general purpose amplifier
* Public mobile radios
* Industrial, scientific, medical
* Jammers
* EMC testing

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