Description
CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev.2 * 29 January 2013 Objective data sheet 1.Product profile 1.1 General descri.
CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.
Features
* Frequency of operation is from DC to 3.5 GHz
* 100 W general purpose broadband RF Power GaN HEMT
NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
* Excellent ruggedness (VSWR 10 : 1)
* High voltage operation (50 V)
* Thermally enhanced package
1.
Applications
* Commercial wireless infrastructure (cellular, WiMAX)
* Radar
* Broadband general purpose amplifier
* Public mobile radios
* Industrial, scientific, medical
* Jammers
* EMC testing