PDTA114ES

PNP resistor-equipped transistor

NXP

PDTA114ES Features

* Built-in bias resistors R1 and R2 (typ. 10 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. APPLICATIONS

* Especially suitable for space reduction in interface and driver circuit applications

* Inverter circuit conf

PDTA114ES General Description

PNP resistor-equipped transistor in a TO-92; SOT54 plastic package. NPN complement: PDTC114ES. PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground (+) Fig.2 Equivalent inverter symbol. MAM338 PDTA114ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SO.

PDTA114ES Datasheet (69.90 KB)

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Datasheet Details

Part number:

PDTA114ES

Manufacturer:

NXP ↗

File Size:

69.90 KB

Description:

Pnp resistor-equipped transistor.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114ES PNP resistor-equipped transistor Product speciﬁcation Supersedes data of 1997 Ju.

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PDTA114ES PNP resistor-equipped transistor NXP

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PDTA114ES Features

PDTA114ES General Description

Datasheet Details

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