PDTA114ET

PNP resistor-equipped transistor

NXP

PDTA114ET Features

* Built-in bias resistors R1 and R2 (typ. 10 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. APPLICATIONS

* Especially suitable for space reduction in interface and driver circuits

* Inverter circuit configurations w

PDTA114ET General Description

PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114ET. 1 3 2 MARKING TYPE NUMBER PDTA114ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗03 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig..

PDTA114ET Datasheet (715.87 KB)

PDTA114ET Datasheet Preview — Preview of PDTA114ET PDF

Datasheet Details

Part number:

PDTA114ET

Manufacturer:

NXP ↗

File Size:

715.87 KB

Description:

Pnp resistor-equipped transistor.
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTA114ET PNP resistor-equipped transistor Product speciﬁcation Supersedes data of 1998 May.

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PDTA114ET PNP resistor-equipped transistor NXP

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PDTA114ET Features

PDTA114ET General Description

Datasheet Details

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Description:

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