Datasheet Details
Part number:
PDTA123ET
Manufacturer:
File Size:
50.60 KB
Description:
PNP resistor-equipped transistor
Features
* Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)
* Simplification of circuit design
* Reduces number of components and board space. APPLICATIONS
* Especially suitable for space reduction in interface and driver circuits
* Inverter circuit configurations
PDTA123ET_PhilipsSemiconductors.pdf
PDTA123ET, PNP resistor-equipped transistor
PNP resistor-equipped transistor in a SOT23 plastic package.
NPN complement: PDTC123ET.
PINNING PIN 1 2 3 MARKING TYPE NUMBER PDTA123ET Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) ∗21 base/input emitter/ground (+) collector/output MGA893 - 1 1 Top view 2 MAM100 PDTA
PDTA123ET Distributor
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