PDTA123ET Datasheet - NXP

PDTA123ET PNP resistor-equipped transistor

PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC123ET. PINNING PIN 1 2 3 MARKING TYPE NUMBER PDTA123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗21 base/input emitter/ground (+) collector/output MGA893 - 1 1 Top view 2 MAM100 PDTA.

PDTA123ET Features

* Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. APPLICATIONS

* Especially suitable for space reduction in interface and driver circuits

* Inverter circuit configurations

PDTA123ET_PhilipsSemiconductors.pdf