PDTA123ET

PNP resistor-equipped transistor

NXP

PDTA123ET Features

* Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. APPLICATIONS

* Especially suitable for space reduction in interface and driver circuits

* Inverter circuit configurations

PDTA123ET General Description

PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC123ET. PINNING PIN 1 2 3 MARKING TYPE NUMBER PDTA123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗21 base/input emitter/ground (+) collector/output MGA893 - 1 1 Top view 2 MAM100 PDTA.

PDTA123ET Datasheet (50.60 KB)

PDTA123ET Datasheet Preview — Preview of PDTA123ET PDF

Datasheet Details

Part number:

PDTA123ET

Manufacturer:

NXP ↗

File Size:

50.60 KB

Description:

Pnp resistor-equipped transistor.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product speciﬁcation Supersedes data of 1998 Ma.

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PDTA123ET PNP resistor-equipped transistor NXP

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PDTA123ET Features

PDTA123ET General Description

Datasheet Details

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Description:

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