Datasheet Details
- Part number
- PDTA123EMB
- Manufacturer
- nexperia ↗
- File Size
- 702.28 KB
- Datasheet
- PDTA123EMB-nexperia.pdf
- Description
- PNP resistor-equipped transistor
PDTA123EMB Description
SOT883B PDTA123EMB PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev.2 * 4 May 2012 Product data sheet 1.Product profile .
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PDTA123EMB Features
* 100 mA output current capability
* Reduces component count
* Built-in bias resistors
* Reduces pick and place costs
* Simplifies circuit design
* AEC-Q101 qualified
* Leadless ultra small SMD plastic
package
PDTA123EMB Applications
* Low-current peripheral driver
* Control of IC inputs
* Replaces general-purpose transistors in digital applications
* Mobile applications
1.4 Quick reference data
Table 1. Symbol VCEO
IO R1 R2/R1
Quick reference data Parameter collector-emitter voltage output current bias resis
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