PDTA123YMB PNP resistor-equipped transistor

NXP

Description

SOT883B PDTA123YMB PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev.1 * 26 June 2012 Product data sheet 1.Product profile .
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

📥 Download Datasheet

PDTA123YMB Datasheet Preview — Preview of PDTA123YMB PDF

Datasheet Specifications

Part number: PDTA123YMB
Manufacturer: NXP ↗
File Size: 201.69 KB
Datasheet: PDTA123YMB-NXP.pdf
Description: PNP resistor-equipped transistor

Features

* 100 mA output current capability
* Reduces component count
* Built-in bias transistors
* Reduces pick and place costs
* Simplifies circuit design
* AEC-Q101 qualified
* Leadless ultra small SMD plastic package

Applications

* Low-current peripheral driver
* Control of IC inputs
* Replaces general-purpose transistors in digital applications
* Mobile applications 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resis

PDTA123YMB Distributors

📁 Related Datasheet

PDTA123Y PDTA123EMB PDTA123J PDTA123JMB PDTA123JQA PDTA123TMB

📌 All Tags

PDTA123YMB PNP resistor-equipped transistor NXP

NXP PDTA123YMB-like datasheet