PDTC123 Datasheet - NXP

NPN resistor-equipped transistor

PDTC123 Features

* Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. k, 4 columns PDTC123ET 3 3 R1 1 R2 2 1 2 MAM097 APPLICATIONS

* Especially suitable for space reduction in interface and driver

PDTC123 General Description

NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA123ET. Top view Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN 1 2 3 MARKING 2 DESCRIPTION base/input emitter/ground collector/output 1 3 TYPE NUMBER PDTC123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Ma.

PDTC123 Datasheet (50.49 KB)

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Datasheet Details

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PDTC123

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NXP ↗

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50.49 KB

Description:

Npn resistor-equipped transistor.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor Product speciﬁcation Supersedes data of 1998 Ma.

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PDTC123 NPN resistor-equipped transistor NXP

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PDTC123 Features

PDTC123 General Description

Datasheet Details

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