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PDTC123EMB NPN resistor-equipped transistor

PDTC123EMB Description

SOT883B PDTC123EMB NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev.1 * 3 April 2012 Product data sheet 1.Product profile.
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTC123EMB Features

* 100 mA output current capability
* Reduces component count
* Built-in bias resistors
* Reduces pick and place costs
* Simplifies circuit design
* AEC-Q101 qualified
* Leadless ultra small SMD plastic package

PDTC123EMB Applications

* Low-current peripheral driver
* Control of IC inputs
* Replaces general-purpose transistors in digital applications
* Mobile applications 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resis

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