* 100 mA output current capability
* Reduces component count
* Built-in bias resistors
* Reduces pick and place costs
* Simplifies circuit design
* AEC-Q101 qualified
* Leadless ultra small SMD plastic package
* Low package height of 0.37 mm 1.3 Applications
* L
PDTC123EMB Datasheet (699.91 KB)
PDTC123EMB
699.91 KB
Npn resistor-equipped transistor.
SOT883B PDTC123EMB NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 3 April 2012 Product data sheet 1. Product profile.
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