PDTC123ET Datasheet (NXP) - NPN resistor-equipped transistor

PDTC123ET, NPN resistor-equipped transistor

NPN resistor-equipped transistor in a SOT23 plastic package.

PNP complement: PDTA123ET.

Top view Fig.1 Simplified outline (SOT23) and symbol.

PINNING PIN 1 2 3 MARKING 2 DESCRIPTION base/input emitter/ground collector/output 1 3 TYPE NUMBER PDTC123ET Note 1.

∗ = p : Made in Hong Kong.

∗ = t : Ma

PDTC123ET Features

* Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. k, 4 columns PDTC123ET 3 3 R1 1 R2 2 1 2 MAM097 APPLICATIONS

* Especially suitable for space reduction in interface and driver