PDTC123JT Datasheet - NXP

NPN resistor-equipped transistor

PDTC123JT Features

* Built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ respectively)

* Simplification of circuit design

* Reduces number of components and board space. k, 4 columns PDTC123JT 3 3 APPLICATIONS

* Especially suitable for space reduction in interface and driver cir

PDTC123JT General Description

NPN resistor-equipped transistor in a SOT23 plastic package. 1 Top view 2 MAM097 R1 1 R2 2 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTC123JT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. PINNING PIN 1 2 3 base/input emitter/ground collector/output Fig.2 Equi.

PDTC123JT Datasheet (66.26 KB)

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Datasheet Details

Part number:

PDTC123JT

Manufacturer:

NXP ↗

File Size:

66.26 KB

Description:

Npn resistor-equipped transistor.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor Product speciﬁcation Supersedes data of 1998 Ma.

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PDTC123JT NPN resistor-equipped transistor NXP

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PDTC123JT Features

PDTC123JT General Description

Datasheet Details

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PDTC123JT Distributor