PHB125N06LT TrenchMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the.

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Datasheet Specifications

Part number: PHB125N06LT
Manufacturer: NXP ↗
File Size: 70.18 KB
Datasheet: PHB125N06LT_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Logic level FET

Applications

* PHB125N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 75 250 175 8 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DE

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PHB125N06LT TrenchMOS transistor Logic level FET NXP

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