PHB125N06LT Datasheet, Fet, NXP

PHB125N06LT Features

• Fet very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB12

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Part number:

PHB125N06LT

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NXP ↗

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📄 Datasheet

Description:

Trenchmos transistor logic level fet. N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trenc

PHB125N06LT Application

• Applications PHB125N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissip

TAGS

PHB125N06LT

NXP

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